RB530S-30_11 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier Diode

RB530S-30
　
Data Sheet
Electical characteristics curves
1000
100
Ta=125C
10 Ta=75C
1
Ta=-25C
0.1
Ta=25C
0.01
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE : V_F(mV)
V_F-I_F CHARACTERISTICS
1000000
100000
10000
Ta=125
Ta=75C
1000
100
Ta=25C
10
Ta=-25C
1
0.1
0
10
20
30
REVERSE VOLTAGE : V_R(V)
V_R-I_R CHARACTERISTICS
370
Ta=25C
1000
360
V_F=10mA
900
n=30pcs
800
Ta=25C
V_R=10V
n=30pcs
700
350
600
500
340
400
AVE : 347.5mV
330
300
AVE : 108.3nA
200
100
320
0
100
f=1MHｚ
10
1
0
5
10
15
20
REVERSE VOLTAGE : V_R(V)
V_R-Ct CHARACTERISTICS
20
19
Ta=25C
18
f=1MHz
17
VR=0V
n=10pcs
16
15
14
AVE : 16.28pF
13
12
11
10
20
15
10
5
0
1000
100
10
V_F DISPERSION MAP
1cyc
Ifsm
8.3ms
AVE : 4.20A
I_FSM DISRESION MAP
Rth(j-a)
Rth(j-c)
1
0.001 0.01 0.1
1
10 100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
I_R DISPERSION MAP
10
Ifsm
8.3ms 8.3ms
1cyc
5
Ct DISPERSION MAP
10
Ifsm
t
5
0
1
10
100
NUMBER OF CYCLES
I_FSM-CYCLE CHARACTERISTICS
0.1
DC
0.08
D=1/2
0.06
Sin(=180)
0.04
0.02
0
0
0.05
0.1
0.15
0.2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
0
1
10
100
TIME : t(ms)
I_FSM-t CHARACTERISTICS
0.02
0.015
0.01
0.005
0
0
Sin(=180)
DC
D=1/2
5
10
15
20
25
30
REVERSE VOLTAGE : V_R(V)
V_R-P_R CHARACTERISTICS
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2011.03 - Rev.B