RB530S-30_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier Diode

Schottky barrier Diode
RB530S-30
Applications
General rectification
Dimensions (Unit : mm)
Features
1)Ultra small mold type. (EMD2)
2)Low I_R
3)High reliability
Construction
Silicon epitaxial planer
Data Sheet
Land size figure (Unit : mm)
0.8
EMD2
Structure
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ_φ11._.5₅±_5±0₀._.0₀5₅
0.2±0.05
00.9.905±±0.005.06
0
E空mポptケy pッoトcket ^4.0±0.1
2.0±0.05
φ0.5
0.2
00.7.756±±0.005.05
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (DC)
V_R
Average rectified forward current
Io
Forward current surge peak (60Hz/1cyc)
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
Electical characteristics (Ta=25C)
Parameter
Forward voltage
Reverse current
Symbol
V_F
I_R
Limits
Unit
30
V
100
mA
500
mA
125
C
-40 to +125
C
Min.
Typ.
Max.
-
-
0.45
-
-
0.5
Unit
Conditions
V
I_F=10mA
μA
V_R=10V
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2011.03 - Rev.B