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| RB530S-30 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier Diode | |||
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RB530S-30
ã
ï¬Electical characteristics curves
1000
1000000
Ta=125ï°C
100
100000
10 Ta=75ï°C
1
Ta=-25ï°C
10000
1000
100
0.1
Ta=25ï°C
10
0.01
1
Ta=125ï°
Ta=75ï°C
Ta=25ï°C
Ta=-25ï°C
0.001
0
100 200 300 400 500 600
0.1
0
10
20
30
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
370
Ta=25ï°C
1000
VF=10mA
900
Ta=25ï°C
360
n=30pcs
800
VR=10V
n=30pcs
700
350
600
500
340
400
AVE : 347.5mV
330
300
AVE : 108.3nA
200
100
320
0
Data Sheet
100
f=1MHï½
10
1
0
5
10
15
20
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
20
19
Ta=25ï°C
18
f=1MHz
VR=0V
17
n=10pcs
16
15
AVE : 16.28pF
14
13
12
11
10
20
15
10
5
0
1000
100
10
VF DISPERSION MAP
1cyc
Ifsm
8.3ms
AVE : 4.20A
IFSM DISRESION MAP
Rth(j-a)
Rth(j-c)
1
0.001 0.01 0.1
1
10 100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
IR DISPERSION MAP
10
Ifsm
8.3ms 8.3ms
1cyc
5
Ct DISPERSION MAP
10
Ifsm
t
5
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0.1
DC
0.08
D=1/2
0.06
Sin(ï±=180)
0.04
0.02
0
0
0.05
0.1
0.15
0.2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
0
1
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
0.02
0.015
0.01
0.005
0
0
Sin(ï±=180)
DC
D=1/2
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
2/3
2010.02 - Rev.A
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