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| RB530S-30 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier Diode | |||
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Schottky barrier Diode
RB530S-30
ï¬Applications
General rectification
ï¬Dimensions (Unit : mm)
ï¬Features
1)Ultra small mold type. (EMD2)
2)Low IR
3)High reliability
ï¬Construction
Silicon epitaxial planer
ï¬Land size figure (Unit : mm)
0.8
EMD2
ï¬Structure
ï¬Taping specifications (Unit : mm)
ï¬Absolute maximum ratings (Ta=25ï°C)
Parameter
Symbol
Reverse voltage (DC)
VR
Average rectified forward current
Io
Forward current surge peak (60Hz/1cyc)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
ï¬Electical characteristics (Ta=25ï°C)
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Limits
Unit
30
V
100
mA
500
mA
125
ï°C
-40 to +125
ï°C
Min.
Typ.
Max.
-
-
0.45
-
-
0.5
Unit
Conditions
V
IF=10mA
μA
VR=10V
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©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.A
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