RB522ES-30 Datasheet, PDF (2/6 Pages) Rohm – Schottky Barrier Diode

RB522ES-30
lElectrical Characteristic Curves
Data Sheet
1000
100
Tj=150℃
Tj=125℃
Tj=75℃
10
Tj=-25℃
Tj=25℃
10000
1000
100
10
1
0.1
Tj=150℃ ^Tj^=125℃
Tj=75℃
Tj=25℃
Tj=-25℃
1
0 100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE：VF(mV)
V_F-I_F CHARACTERISTICS
35
Tj=25℃
30
IF=0.1A
IR=0.1A
25
Irr/IR=0.10
n=10pcs
20
15
10
Ave.:5.6ns
5
0
t_rr DISPERSION MAP
0.20
T_j=150℃
0.15
0.10
Sin(θ＝180) ^D=1/2
0.05
DC
0.00
0
20
40
60
80
100
AVERAGE RECTIFIED
FORWARD CURRENT：Io(mA)
I_o-P_F CHARACTERISTICS
0.01
0
10
20
30
REVERSE VOLTAGE：VR(V)
V_R-I_R CHARACTERISTICS
10
I_FSM
8m.3s 8m.3s
1cyc
T_a=25℃
1
1
10
100
NUMBER OF CYCLES
I_FSM-CYCLE CHARACTERISTICS
0.06
T_j=150℃
0.05
0.04
Sin(θ＝180)
0.03
D=1/2
0.02
DC
0.01
0.00
0
10
20
30
REVERSE VOLTAGE:VR(V)
V_R-P_R CHARACTERISTICS
300
IO
0A
250
0V
D=t/T
VR=VRM/2
VR t
Tj=150℃
200
DC
T
D=1/2
150
100
Sin(θ＝180)
50
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE:Ta(℃)
DERATING CURVE (I_o-T_a)
100
T_j=25℃
f=1MHz
10
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
V_R-C_t CHARACTERISTICS
10
I_FSM
1cyc
t
T_a=25℃
1
1
10
100
TIME:t(ms)
I_FSM-t CHARACTERISTICS
1000
Glass epoxy board mounted
PF=0.9W
IM=10mA
100
1ms time
300us
Rth(j-a)
10
0.001 0.01 0.1 1 10 100
TIME:t(s)
R_th-t CHARACTERISTICS
1000
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2016.12 - Rev.A