RB522ES-30 Datasheet, PDF (1/6 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB522ES-30
lApplication
General rectification
lDimensions (Unit : mm)
Data Sheet
lLand Size Figure (Unit : mm)
0.31
lFeatures
1) Small silicon package
(SMD0603)
2) High Accuracy
Manufacturing Dimension
tolerance10mm
3) Low V_F
lConstruction
Silicon epitaxial planar type
0～0.030
0.280±0.010
0.260±0.010
0.300±0.010
ROHM: SMD0603
lTaping Dimensions (Unit : mm)
SMD0603
lStructure
Cathode
Anode
●Absolure Maximum Ratings (Ta=25^oC)
Parameter
Symbol
Conditions
Repetitive Peak Reverse Voltage V_RM
Duty≦0.5
Reverse Voltage
Average forward rectified current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
V_R
I_O
I_FSM
T_j
Direct Reverse Voltage
Glass epoxy board mounted, 60Hz half sin
wave, resistive load,
60Hz half sin wave, one cycle, non-repetitive
at T_a=25ºC
-
Storage Temperature
T_stg
-
●Electrical Characteristics (Tj=25℃)
Parameter
Symbol
Forward Voltage
V_F
Reverse Current
I_R
Conditions
I_F=10mA
V_R=10V
Limits
30
30
100
500
150
-40～+150
Max
370
7
Unit
V
V
mA
mA
ºC
ºC
Unit
mV
μA
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2016.12 - Rev.A