RB521S-30_11 Datasheet, PDF (2/4 Pages) Rohm – Schottky Barrier Diode

RB521S-30
Data Sheet
1000
100 ^Ta=125℃
10 ^Ta=75℃
1
Ta=-25℃
0.1
Ta=25℃
0.01
0.001
0
100 200 300 400 500
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100000
10000
1000
100
10
1
0.1
0.01
0
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
10
20
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
f=1MHz
10
1
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
50
450
45
Ta=25℃
IF=200mA
40
440
n=10pcs
35
30
430
25
20
420
15
10
410
5
AVE:421.0mV
0
400
VF DISPERSION MAP
Ta=25℃
VR=10V
n=30pcs
AVE:4.775uA
IR DISPERSION MAP
20
19
Ta=25℃
f=1MHz
18
VR=0V
17
n=10pcs
16
15
14
13
AVE:14.33pF
12
11
10
Ct DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10
5
AVE:5.60A
0
IFSM DISPERSION MAP
10
10
Ifsm
8.3ms 8.3ms
1cyc
5
5
Ifsm
t
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IM=1mA
IF=20mA
10
0.001
1ms ^time
300us
0.1
10
TIME:(s)
Rth-t CHARACTERISTICS
1000
0.2
0.15
D=1/2
DC
0.1 Sin(θ＝180)
0.05
0
0
0.1 0.2 0.3 0.4 0.5
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pｆ CHARACTERISTICS
0.5
0.4
0.3
D=1/2
DC
0.2
Sin(θ＝180)
0.1
0
0
10
20
30
REVERSE VOLTAGE：VR(V)
VR-P_R CHARACTERISTICS
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2011.03 - Rev.F