RB521S-30_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RB521S-30
Applications
General rectification
Dimensions (Unit : mm)
0.8±0.05
0.12±0.05
Land size figure (Unit : mm)
0.8
Features
1)Ultra small mold type.（EMD2）
2)Low VF
3)High reliability
Construction
Silicon epitaxial planar
0.3±0.05
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
Taping specifications(Unit : mm)
4.0±0.1
2.0±0.05
0.6±0.1
φ1.5±0.05
φ1.55±0.05
EMD2
Structure
0.2±0.05
0⁰.9^.90⁵±^±0.⁰05^.06
0
E空mポptケy pッoトcket ^4.0±0.1
2 .0±0.05
φ0.5
Absolute maximum ratings(Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (DC)
V_R
30
V
Average rectified forward current
Io
200
mA
Forward current surge peak (60Hz・1cyc)
I_FSM
1
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-40 to +125
°C
0.2
00.7.756±±0.005.05
Electrical characteristics(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F
-
-
0.50
I_R
-
-
30
Unit
Conditions
V
I_F=200mA
μA
V_R=10V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.03 - Rev.F