RB521ES-30 Datasheet, PDF (2/3 Pages) Rohm – Schottky Barrier Diode

RB521ES-30
Datasheet
100
Tj=125℃
Tj=125℃
Tj=75℃
10
Tj=-25℃
Tj=25℃
100000
10000
1000
100
10
1
0.1
Tj=150℃
Tj=125℃
Tj=75℃
Tj=25℃
Tj=-25℃
1
0 100 200 300 400 500 600 700 800
FORWARD VOLTAGE：VF(mV)
V_F-I_F CHARACTERISTICS
0.01
0
10
20
30
REVERSE VOLTAGE：VR(V)
V_R-I_R CHARACTERISTICS
400
Tj=25℃
350
IF=100mA
Ave.:294.7mV
n=30pcs
300
250
200
150
100
V_F DISPERSION MAP
5
Tj=25℃
4
VR=60V
n=30pcs
3
2
Ave.:1.4uA
1
0
I_R DISPERSION MAP
10
T_j=25℃
f=1MHz
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
V_R-C_t CHARACTERISTICS
10
Tj=25℃
f=1MHz
9
VR=0V
n=10pcs
8
Ave.:7pF
7
6
5
C_t DISPERSION MAP
10
35
9
8
I_FSM
1cyc
30
7
8.3ms _Ta=25℃
25
6
20
5
Ave.:3.7A
4
15
3
10
2
5
1
0
0
I_FSM DISPERSION MAP
2
T_j=150℃
1.5
Sin(θ＝180)
1
D=1/2
0.5
DC
0
0
10
20
30
REVERSE VOLTAGE:VR(V)
V_R-P_R CHARACTERISTICS
Tj=25℃
IF=0.1A
IR=0.1A
Irr/IR=0.1
n=10pcs
Ave.:6.6ns
t_rr DISPERSION MAP
200
150
Sin(θ＝180)
100
T_j=150℃
D=1/2 DC
50
0
0
50
100
150
200
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
I_o-P_F CHARACTERISTICS
Diode
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2/2
RB521ES-30
2015.07 - Rev.A