RB521ES-30 Datasheet, PDF (1/3 Pages) Rohm – Schottky Barrier Diode

RB521ES-30
Schottky Barrier Diode
Datasheet
●Applications
General rectification
●Dimensions (Unit : mm)
●Land Size Figure (Unit : mm)
0.31
●Features
1) Small silicon package (SMD0603)
2) High Accuracy Manufacturing
　 Dimension tolerance±10um
3) Low V_F
●Construction
Silicon epitaxial planar type
0～0.030
0.280±0.010
0.260±0.010
0.300±0.010
SMD0603
●Structure
Cathode
ROHM:SMD0603
●Taping Dimensions (Unit : mm)
Anode
●Absolure Maximum Ratings (Ta=25^oC)
Parameter
Symbol
Conditions
Repetitive Peak Reverse Voltage V_RM
Duty≦0.5
Reverse Voltage
Average forward rectified current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
V_R
I_O
I_FSM
T_j
Direct Reverse Voltage
Glass epoxy board mounted, 60Hz half sin
wave, resistive load, T_c=110ºC Max.
60Hz half sin wave, one cycle, non-repetitive
at T_a=25ºC
-
Storage Temperature
T_stg
-
Limits
30
30
100
500
150
-40～+150
●Electrical Characteristics (Tj=25℃)
Parameter
Symbol
Forward Voltage
V_F
Reverse Current
I_R
Conditions
I_F=10mA
V_R=10V
Min.
Typ.
－
350
－
1.2
Unit
V
V
mA
mA
ºC
ºC
Max.
Unit
370
mV
7
μA
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2015.07 - Rev.A