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RB521CS-30T2R Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode
RB521CS-30
zElectrical characteristic curves
1000
100 Ta=125°C
Ta=75°C
10
1
0.1
Ta=−25°C
Ta=25°C
10000
1000
100
10
1
0.01
0.1
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
0.01
0
300
30
Ta=25°C
IF=10mA
25
290
n=30pcs
20
280
15
270
10
260
AVE:270.2mV
5
250
0
VF DISPERSION MAP
 
Data Sheet
100
Ta=125°C
Ta=75°C
Ta=25°C
10
Ta=-25°C
f=1MHz
10
20
30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1
0
5
10
15
20
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
Ta=25°C
VR=10V
n=30pcs
AVE:2.017uA
IR DISPERSION MAP
20
19
Ta=25℃
f=1MHz
18
VR=0V
17
n=10pcs
16
15
14
13
12
AVE:17.34pF
11
10
Ct DISPERSION MAP
20
1cyc
Ifsm
15
8.3ms
10
5
AVE:3.90A
0
IFSM DISRESION MAP
10
10
Ifsm
8.3ms 8.3ms
1cyc
5
5
Ifsm
t
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0
1
10
100
TIME1:t(ms)
IFSM-t CHARACTERISTICS
1000
0.1
0.1
Rth(j-a)
0.08
0.08
Rth(j-c)
D=1/2
0.06
100
Mounted on epoxy board
Sin(θ=180)
IM=10mA
IF=100mA
0.04
DC
0.06
0.04
D=1/2
DC
1ms tim
0.02
300us
0.02
Sin(θ=180)
10
0.001
0.01 0.1
1
10 100
TIME : t(s)
Rth-t CHARACTERISTICS
1000
0
0
0.1
0.2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
0
0
10
20
30
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
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2009.12 - Rev.B