RB521CS-30T2R Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Schottky barrier diode
RB521CS-30
zApplications
Low current rectification
zFeatures
1) Ultra Small power mold type
(VMN2)
2) Low V_F
3) High reliability
zDimensions (Unit : mm)
÷õýʶ÷õ÷ü
÷õøýʶ÷õ÷ü
÷õúüʶ÷õø
÷õúþʶ÷õ÷ú
zStructure
Silicon epitaxial planer
ę Ė ď Ĕ çāçĝ Ĕ ĕ ù
īĶĻçïŀĬĨĹçľ ĬĬIJçĭĨĪĻĶĹŀðçòçīĨŀ
zLand size figure (Unit : mm)
÷õüü
ĝĔ ĕù
zStructure
zTaping dimensions (Unit : mm)
ûʶ÷õø
ùʶ÷õ÷ü
Пøõüü
÷õùʶ÷õ÷ü
П÷õü
÷õþʶ÷õ÷ü
ùʶ÷õ÷ü
ûõ÷ʶ÷õø
÷õüù
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (DC)
V_R
30
V
Average rectifierd forward current
Io
100
mA
Forward current surge peak (60Hz/1cyc) I_FSM
500
mA
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-40 to +150
°C
zElectrical characteristic (Ta=25°C)
Parameter
Forward vpltage
Reverse current
Symbol
V_F
I_R
Min.
-
-
Typ. Max.
- 0.35
-
10
Unit
Conditions
V
I_F=10mA
µA
V_R=10V
www.rohm.com
©2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.B