RB520ZS-30_1 Datasheet, PDF (2/4 Pages) Rohm – Schottky Barrier Diode

Diodes
zElectrical characteristic curves
100
Ta=150℃
Ta=125℃
10
Ta=75℃
Ta=25℃
1
Ta=-25℃
0.1
0
100 200 300 400 500 600 700
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
1000000
100000
10000
1000
100
10
1
0.1
0
Ta=150℃ _Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
10
20
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
RB520ZS-30
10
f=1MHｚ
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
430
100
Ta=25℃
90
VF=10mA
420
n=30pcs
80
70
410
60
50
400
40
30
390
20
10
AVE:405.76mV
380
0
Ta=25℃
VR=10V
n=30pcs
AVE:19.93nA
VF DISPERSION MAP
IR DISPERSION MAP
50
45
Ta=25℃
f=1MHz
40
VR=0V
35
n=10pcs
30
25
20
AVE:6.3pF
15
10
5
0
Ct DISPERSION MAP
30
25
Ifsm
8.3ms
20
1cyc
15
AVE:4.30A
10
5
0
IFSM DISPERSION MAP
10
10
Ifsm
8.3ms 8.3ms
1cyc
5
5
Ifsm
t
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
10000
Mounted on epoxy board
IM=10mA
IF=50mA
1000
1ms ^time
300us
Rth(j-a)
100
Rth(j-c)
0.15
0.1
Sin(θ＝180)
0.05
D=1/2
DC
10
0.001
0.01 0.1 1 10 100
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0
0.05
0.1
0.15
0.2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0.01
0.008
0.006
0.004
Sin(θ＝180)
DC
D=1/2
0.002
0
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
Rev.C
2/3