RB520ZS-30_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Diodes
Schottky Barrier Diode
RB520ZS-30
zApplications
General rectification
zDimensions (Unit : mm)
RB520ZS-30
zFeatures
1) Ultra small mold type.(GMD2)
2) Low IR
Ａ
0～0.03
3) High reliability
zConstruction
Silicon epitaxial planar
0.3±0.05
0.3±0.03
zLand size figure (Unit : mm)
0.31
0.27±0.03
zStructure
ROHM : GMD2
JEDEC : -
JEITA : -
dot(year week factory)
GMD2
zTaping dimensions (Unit : mm)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (DC)
V_R
30
V
Average rectified forward current
Io
100
mA
Forward current surge peak （60Hz・1cyc）
I_FSM
500
mA
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-40 to +150
℃
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min.
V_F
-
I_R
-
Typ. Max.
- 0.46
-
0.3
Unit
Conditions
V
I_F=10mA
µA
V_R=10V
Rev.C
1/3