RB520S-30_11 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

RB520S-30
Data Sheet
1000
Ta=125℃
100
Ta=75℃
10
1
Ta=25℃
0.1
Ta=-25℃
0.01
0.001
0 100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
1000000
100000
10000
Ta=125℃
Ta=75℃
1000
100
10
Ta=25℃
Ta=-25℃
1
0
10
20
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
530
Ta=25℃
520
IF=200mA
n=30pcs
510
500
490
AVE:507.6mV
480
VF DISPERSION MAP
1000
900
800
700
600
500
400
300
200
100
0
Ta=25℃
VR=10V
n=30pcs
AVE:114nA
IR DISPERSION MAP
100
f=1MHｚ
10
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
50
45
Ta=25℃
f=1MHz
40
VR=0V
35
n=10pcs
30
25
20
AVE:28.2pF
15
10
5
0
Ct DISPERSION MAP
30
25
Ifsm
8.3ms
20
1cyc
15
AVE:5.60A
10
5
0
IFSM DISRESION MAP
10
10
Ifsm
8.3ms 8.3ms
1cyc
5
5
Ifsm
t
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
10000
Mounted on epoxy board
0.3
IM=10mA
IF=100mA
D=1/2
1000
1ms ^time
Rth(j-a)
0.2
300us
Sin(θ＝180)
DC
100
Rth(j-c)
0.1
10
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
0
1000
0
0.1
0.2
0.3
0.4
0.5
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0.01
0.008
0.006
0.004
DC
D=1/2
Sin(θ＝180)
0.002
0
0
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
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2011.03 - Rev.D