RB520S-30_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Data Sheet
Schottky barrier diode
RB520S-30
Applications
Low current rectification
Dimensions (Unit : mm)
0.8±0.05
0.12±0.05
Land size figure (Unit : mm)
0.8
Features
1) Ultra Small mold type. (EMD2)
2) Low I_R.
3) High reliability.
Construction
Silicon epitaxial planar
0.3±0.05
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
0.6±0.1
Taping specifications(Unit : mm)
4.0±0.1
2.0±0.05
φ_φ1₁._.5₅±_5±0₀._.0₀5₅
EMD2
Structure
0.2±0.05
Absolute maximum ratings(Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
Symbol
V_R
Io
I_FSM
Tj
Tstg
0⁰.9^.90⁵±^±0.0⁰5^.06
0
E空mポptケy pッoトcket ^4.0±0.1
Limits
Unit
30
V
200
mA
1
A
125
°C
-40 to +125
°C
2.0±0.05
φ0.5
0.2
00.7.756±±0.005.05
Electrical characteristics(Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
-
0.6
Reverse current
I_R
-
-
1
Unit
Conditions
V
I_F=200mA
μA
V_R=10V
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2011.03 - Rev.D