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RB481YT2R Datasheet, PDF (2/4 Pages) Rohm – Schottky Barrier Diode
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RB481Y
　
Data Sheet
1000
100
10
Ta=125℃
Ta=75℃
1
Ta=-25℃
0.1
Ta=25℃
0.01
0.001
0 100 200 300 400 500
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100000
10000
1000
Ta=125℃
Ta=75℃
100
Ta=25℃
10
Ta=-25℃
1
0.1
0.01
0
10
20
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
f=1MHz
10
1
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
360
Ta=25℃
350
IF=100mA
n=30pcs
340
330
AVE:340.2mV
320
310
VF DISPERSION MAP
50
35
45
Ta=25℃
34
40
VR=10V
n=30pcs
33
35
32
30
31
25
30
20
29
15
28
10
AVE:4.775uA
27
5
26
0
25
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:29.58pF
IR DISPERSION MAP
Ct DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10
5
AVE:5.60A
0
IFSM DISPERSION MAP
10
10
Ifsm
8.3ms 8.3ms
1cyc
5
5
Ifsm
t
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
0.3
Per chip
Rth(j-c)
100
Mounted on epoxy board
IM=10mA
IF=100mA
10
0.001
1ms time
300us
0.1
10
TIME:(s)
Rth-t CHARACTERISTICS
1000
0.2
D=1/2
Sin(θ＝180)
0.1
DC
0
0
0.1
0.2
0.3
0.4
0.5
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pｆ CHARACTERISTICS
0.5
Per chip
0.4
0.3
D=1/2
DC
0.2
Sin(θ＝180)
0.1
0
0
10
20
30
REVERSE VOLTAGE：VR(V)
VR-PR CHARACTERISTICS
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2009.02 - Rev.D
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