RB481YT2R Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB481Y
●Applications
Low current rectification
●Dimensions (Unit : mm)
11.6.6±±00..105
0.22±0.05
●Features
(4)
(3)
1)Ultra small mold type. (EMD4)
2)Low VF
3)High reliability
0.13±0.05
0～0.1
●Construction
Silicon epitaxial planar
(1)
(2)
0.5
0.5
1.0±0.1
ROHM : EMD4
JEITA : SC-75A Size
dot (year week factory)
0.5±0.05
●Taping specifications (Unit : mm)
●Land size figure (Unit : mm)
0.5
1.0
EMD4
●Structure
4.0±0.1
2.0±0.05
φ1.5±0.1
　　　　　 0
0.3±0.1
1.65±0.1
1PIN
4.0±0.1
φ0.8±0.1
0.65±0.1
●Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Limits
Unit
Reverse voltage (DC)
V_R
30
V
Average rectified forward current（*1）
Io
100
mA
Forward current surge peak （60Hz・1cyc）（*1）
I_FSM
1
A
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40 to +125
℃
(*1) Rating of per diode
●Electrical characteristics (Ta=25 ℃)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F1
-
0.17 0.28
V_F2
-
0.24 0.33
V_F3
-
0.34 0.43
I_R
-
4
30
Unit
Conditions
V
I_F=1mA
V
I_F=10mA
V
I_F=100mA
µA
V_R=10V
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2009.02 - Rev.D