RB421D_11 Datasheet, PDF (2/4 Pages) Rohm – Schottky Barrier Diode

RB421D
Data Sheet
100
Ta=125℃
10
Ta=75℃
1
0.1
Ta=25℃
Ta=-25℃
0.01
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10000
1000
100
10
1
0.1
0.01
0
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5 10 15 20 25 30 35
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
f=1MHz
10
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
470
D1
460
450
Ta=25℃
IF=100mA
n=30pcs
440
430
AVE:439.5mV
420
VF DISPERSION MAP
310
D２
300
290
280
30
Ta=25℃
IF=10mA
25
n=30pcs
20
15
10
270
5
AVE:281.5mV
260
0
Ta=25℃
VR=10V
n=10pcs
AVE:2.548uA
VF DISPERSION MAP
IR DISPERSION MAP
10
20
9
Ta=25℃
f=1MHz
8
VR=10V
7
n=10pcs
15
6
5
AVE:6.09pF
10
4
3
2
5
1
0
0
30
Ifsm
1cyc
25
8.3ms
20
15
10
AVE:5.50A
5
0
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:6.20ns
Ct DISPERSION MAP
IFSM DISRESION MAP
trr DISPERSION MAP
15
Ifsm
10
8.3ms 8.3ms
1cyc
5
0
0.1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
15
Ifsm
t
10
5
0
0.1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
100
Rth(j-c)
Mounted on epoxy board
10
IM=1mA
IF=10mA
1ms time
300us
1
100
0.001 0.01 0.1 1 10 100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
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2011.04 - Rev.A