RB421D_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RB421D
Applications
Low power rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm)
1.9
Features
1) Small mold type. (SMD3)
2) Low IR
3) High reliability.
Construction
Silicon epitaxial planer
2.9±0.2
各リードとも
0.4 ^{＋0.1 Eac同h寸le法ad has same dimension}
　－0.05
(3)
＋0.1
0 .15 －0.06
0.95
(2)
(1)
0.95
0.95
1.9±0.2
0～ 0.1
0 .8±0 .1
1. 1±0. 2
0. 01
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
Taping specifications (Unit : mm)
4 .0± 0.1
2 .0±0 .05
φ1.5 ±0.1
　　　　　 0
0.8MIN.
SMD3
Structure
0.3±0.1
3.2±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
Storage temperature
(*1) Rating of per diode
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
4 .0±0 .1
φ 1.0 5MI N
Limits
Unit
40
V
40
V
100
mA
1
A
125
°C
40 to 125
°C
1.35±0.1
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
V_F1
-
-
0.55
V_F2
-
-
0.34
I_R1
-
-
30
Ct1
-
6
-
Unit
Conditions
V
I_F=100mA
V
I_F=10mA
μA
V_R=10V
pF
V_R=10V , f=1MHz
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.A