RB411D_15 Datasheet, PDF (2/7 Pages) Guangdong Kexin Industrial Co.,Ltd – Schottky Diodes

RB411D
Data Sheet
1000
100
Ta=25℃
Ta=75℃
Ta=125℃
10
Ta=-25℃
1
0.1
0
100 200 300 400 500
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10000
1000
100
10
1
0.1
0
Ta=125℃
100
Ta=75℃
10
Ta=25℃
Ta=-25℃
10
20
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1
30
0
f=1MHz
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
430
250
Ta=25℃
IF=500mA
420
n=30pcs
240
410
230
400
220
390
AVE:405.6mV
σ:3.0258mV
210
AVE:402.4mV
380
200
20
Ta=25℃
18
IF=10mA
n=30pcs
16
14
12
10
8
6
4
AVE:218.0mV
2
0
Ta=25℃
VR=10V
n=30pcs
AVE:4.67uA
VF DISPERSION MAP
VF DISPERSION MAP
IR DISPERSION MAP
25
20
24
Ta=25℃
f=1MHz
23
22
VR=0V
n=10pcs
15
21
20
10
19
18
5
17
AVE:18.35pF
16
15
0
30
Ifsm
1cyc
25
8.3ms
20
15
10
AVE:5.70A
5
0
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
AVE:6.20ns
Ct DISPERSION MAP
IFSM DISRESION MAP
trr DISPERSION MAP
10
Ifsm
8.3ms 8.3ms
1cyc
5
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
15
Ifsm
t
10
5
0
0.1
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
1000
100
Rth(j-c)
Mounted on epoxy board
10
IM=1mA
IF=10mA
1
0.001
1ms ^time
300us
0.01 0.1 1 10 100
TIME:t(s)
Rth-t CHARACTERISTICS
1000
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2011.04 - Rev.B