RB411D_15 Datasheet, PDF (1/7 Pages) Guangdong Kexin Industrial Co.,Ltd – Schottky Diodes

Data Sheet
Schottky Barrier Diode
RB411D
Applications
Low current rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm)
1.9
Features
1) Small mold type. (SMD3)
2) Low IR
3) High reliability.
Construction
Silicon epitaxial planer
2.9±0.2
各リードとも
0.4_{　＋－00..105} ^{Eac同h 寸le法 ad has same dimension}
(3)
＋0.1
0 .15 －0.06
0.95
(2)
0.95
0.95
1.9±0.2
0.8MIN.
0～ 0.1
SMD3
(1)
0 .8±0 .1
1. 1±0. 2
0. 01
 Structure
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1 .5±0.1
　　　　　 0
0 .3±0.1
3.2 ±0.1
4 .0±0.1
φ1.05MIN
1.35±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
20
V
Average rectified forward current(*1)
Io
500
mA
Forward current surge peak (60Hz / 1cyc)(*1) I_FSM
3
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
40 to 125
°C
(*1) Rating of per diode
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
V_F1
-
- 0.50
V_F2
-
- 0.30
I_R1
-
-
30
Ct1
-
20
-
Unit
Conditions
V
I_F=500mA
V
I_F=10mA
μA
V_R=10V
pF
V_R=10V , f=1MHz
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2011.04 - Rev.B