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| RB225T100 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode | |||
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Diodes
RB225T100
zElectrical characteristic curves
100
Ta=150â
10
Ta=125â
1
Ta=75â
0.1
Ta=25â
Ta=-25â
0.01
0.001
0 100 200 300 400 500 600 700 800 900
FORWARD VOLTAGEï¼VF(mV)
VF-IF CHARACTERISTICS
VFåå¸
780
Ta=25â
IF=15A
770
n=30pcs
760
750
AVE:752.6mV
740
AVE:425.2mV
Ï:1.6771mV
730
VF DISPERSION MAP
300
250
IIffssmm
1cyc
8.3m
200
8.3ms
150
100
50
AVE:237.0A
0
IFSM DISRESION MAP
10000
1000
100
Ta=150â
Ta=125â
Ta=75â
10
Ta=25â
1
0.1
Ta=-25â
0.01
0.001
0.0001
0 10 20 30 40 50 60 70 80 90 100
REVERSE VOLTAGEï¼VR(V)
VR-IR CHARACTERISTICS
IRåå¸
1000
900
800
700
600
500
400
300
200
100
0
Ta=25â
VR=100V
n=30pcs
AVE:478.3nA
IR DISPERSION MAP
30
Ta=25â
25
IF=0.5A
IR=1A
Irr=0.25*IR
20
n=10pcs
15
10
5
AVE:24.3pF
0
trr DISPERSION MAP
10000
1000
æ¡ä»¶f=ï¼f1=1MMHHzz
100
10
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
ï¼£ï½åå¸
2000
1900
1800
Ta=25â
f=1MHz
VR=0V
n=10pcs
1700
1600
1500
1000
100
AVE:1914.5pF
Ct DISPERSION MAP
Ifsm-t
Ifsm
8.3ms 8.3ms
1cyc
10
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
100
Ifsm
t
100
Mounted on epoxy board
IF=10A
IM=100mA
time
300us
10
1ms
Rth(j-a)
1
Rth(j-c)
10
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
100
0.001
0.1
10
TIME:t(ms)
Rth-t CHARACTERISTICS
1000
50
45
40
35
30
25
20
15
10
5
0
0
D=1/2
Sin(θï¼180)
DC
5 10 15 20 25 30 35 40 45 50
AVERAGE RECTIFIED
FORWARD CURRENTï¼Io(A)
Io-Pf CHARACTERISTICS
2/3
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