RB225T100 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB225T100
RB225T100
zApplications
Switching power supply
zFeatures
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
10.0±0.3
　　　 0.1
4.5±0.3
　　　 0.1
2.8±0.2
　　　 0.1
zStructure
①
1.2
1.3
0.8
(1) (2) (3)
ROHM : ï¼´O220FN
① ^{Manufacture Date}
0.7±0.1
0.05
2.6±0.5
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak （60Hz・1cyc）（*1）
Junction temperature
Storage temperature
(*1)Tc=100℃max Rating of per diode : Io/2
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
- 0.86
Reverse current
I_R
-
-
400
Thermal impedance
θjc
-
- 1.75
Limits
Unit
100
V
100
V
30
A
100
A
150
℃
-40 to +150
℃
Unit
V
µA
℃/W
Conditions
I_F=15A
V_R=100V
junction to case
1/3