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RB225T-40 Datasheet, PDF (2/4 Pages) Rohm – Schottky Barrier Diode
RB225T-40
 
Data Sheet
Electrical characteristic curves
100
Ta=150C
10 Ta=125C
Ta=75C
1
0.1
Ta=25C
Ta=-25C
1000000
100000
10000
1000
100
10
1
Ta=150C Ta=125C
Ta=75C
Ta=25C
Ta=-25C
0.01
0
100 200 300 400 500 600
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
0.1
0
5 10 15 20 25 30 35 40
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
10000
1000
100
10
1
0
f=1MHz
5
10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
560
1000
2550
Ta=25C
IF=15A
900
Ta=25C
VR=40V
2540
Ta=25℃
f=1MHz
550
n=30pcs
800
n=30pcs
2530
VR=0V
n=10pcs
700
2520
540
600
2510
500
2500
530
520
AVE:534.5mV
400
300
AVE:78.7uA
200
100
2490
2480
2470
2460
AVE:2515.6pF
510
0
2450
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
50
Ifsm
1cyc
45
250
40
200
8.3ms
35
30
150
25
20
100
15
50
10
AVE:176.0A
5
0
0
IFSM DISPERSION MAP
AVE:27.4ns
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1000
100
Ifsm
8.3ms 8.3ms
1cyc
trr DISPERSION MAP
10
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
100
10
1
Ifsm
t
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
IM=100mA
IF=10A
1ms time
10
300us
Mounted on epoxy board
1
Rth(j-a)
Rth(j-c)
0.1
100
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
50
D=1/2
40
30
20
Sin(=180)
DC
10
0
0
10
20
30
40
50
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
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2010.01 - Rev.A