RB225T-40 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB225T-40
Applications
Switching power supply
Features
1)Cathode common type.(TO-220)
2)Low IR
3)High reliability
Dimensions(Unit : mm)
10.0±0.3
　　　 0.1
4.5±0.3
　　　 0.1
2.8±0.2
　　　 0.1
Construction
Silicon epitaxial planer
①
1.2
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
ROHM : ï¼´O220FN
① ^{Manufacture Date}
2.6±0.5
Structure
(1) (2) (3)
Absolute maximum ratings (Ta=25C)
Parameter
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current(*1)
Forward current surge peak （60Hz・1cyc）(*1)
Junction temperature
Storage temperature
(*1)Tc=105Cmax Per chip:Io/2
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
Electrical characteristics(Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
( ) : tentative
Symbol
V_F
I_R
θjc
Limits
40
40
30
100
150
-40 to +150
Min. Typ. Max.
-
-
0.63
-
-
500
-
- (1.75)
Unit
V
V
A
A
C
C
Unit
V
μA
C/W
Conditions
I_F=15A
V_R=40V
junction to case
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.01 - Rev.A