RB215T-90 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
RB215T-90
zElectrical characteristic curves
100
10
Ta=150℃
Ta=125℃
1
Ta=75℃
Ta=-25℃
0.1
Ta=25℃
1000000
100000
10000
1000
100
10
1
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.01
0
100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.1
0 10 20 30 40 50 60 70 80 90
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10000
1000
100
10
1
0
f=1MHz
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
720
300
1300
710
Ta=25℃
IF=10A
250
n=30pcs
Ta=25℃
VR=90V
n=30pcs
1290
1280
Ta=25℃
f=1MHz
VR=0V
200
1270
n=10pcs
700
1260
150
1250
690
1240
100
AVE:46.0uA
1230
680
AVE:692.7mV
50
1220
1210
AVE:1257.3pF
670
0
1200
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
30
250
Ifsm
1cyc
25
200
8.3ms
20
150
15
100
10
50
5
AVE:168.0A
0
0
IFSM DISRESION MAP
AVE:21.6ns
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1000
100
10
Ifsm
8.3ms 8.3ms
1cyc
trr DISPERSION MAP
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
100
Ifsm
t
100
IM=100mA
IF=10A
10
1ms time
300us
1
Rth(j-a)
Rth(j-c)
10
1
10
100
TIME:t(s)
IFSM-t CHARACTERISTICS
0.1
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
50
40
DC
D=1/2
30
20
Sin(θ＝180)
10
0
0
10 20 30 40 50
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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