RB215T-90 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB215T-90
RB215T-90
zApplications
General rectification
(Common cathode dual chip)
zFeatures
1) Small power mold type.
(PMDU)
2) Low IR
3) High reliability
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
10.0±0.3
　　　 0.1
4.5±0.3
　　　 0.1
2.8±0.2
　　　 0.1
zStructure
①
1.2
1.3
0.8
(1) (2) (3)
ROHM : ï¼´O220FN
① ^{Manufacture Date}
0.7±0.1
0.05
2.6±0.5
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
90
V
Reverse voltage (DC)
V_R
90
V
Average rectified forward current (*1)
Io
20
A
Forward current surge peak (60Hz・1cyc) (*1)
I_FSM
100
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-40 to +150
℃
(*1)Tc=100℃max Per chip : Io/2
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Unit
Conditions
Forward characteristics V_F
-
-
0.75
V I_F=10A
Reverse characteristics I_R
-
Thermal impedance
θjc
-
-
400
µA V_R=90V
-
1.75 ℃/W junction to case
1/3