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RB215T-60NZ Datasheet, PDF (2/7 Pages) Rohm – Schottky barrier diode
RB215T-60NZ
 
Electrical characteristics curves
Data Sheet
10
Ta=150C
Ta=125C
1
Ta=75C
0.1
Ta=-25C
Ta=25C
0.01
0
100 200 300 400 500 600
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
1000000
100000
10000
1000
100
10
1
0.1
0
Ta=150C Ta=125C
Ta=75C
Ta=25C
Ta=-25C
10 20 30 40 50 60
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
10000
1000
f=1MHz
100
10
1
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
540
1000
2000
530
Ta=25C
900
IF=10A
800
n=30pcs
700
Ta=25C
VR=30V
n=30pcs
1900
Ta=25C
f=1MHz
VR=0V
n=10pcs
520
600
1800
500
510
400
1700
AVE:515.0mV
500
300
AVE:140.7uA
200
100
1600
AVE:1704.1pF
490
0
1500
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
Ifsm
1cyc
8.3ms
AVE:166.0A
IFSM DISPERSION MAP
Ifsm
t
30
Ta=25C
25
IF=0.5A
IR=1A
20
Irr=0.25*IR
n=10pcs
15
10
5
AVE:23.3ns
0
trr DISPERSION MAP
Mounted on epoxy board
100
IM=100mA
IF=5A
time
300us
10
1ms
Rth(j-a)
1
Rth(j-c)
1000
100
10
Ifsm
8.3ms 8.3ms
1cyc
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
30
D=1/2
DC
20
Sin(=180)
10
10
1
0.1
10
100
0.001 0.01 0.1
1
10 100 1000
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
0
0
10
20
30
40
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
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2016.09 - Rev.A