RB215T-60NZ Datasheet, PDF (1/7 Pages) Rohm – Schottky barrier diode

Schottky barrier diode
RB215T-60NZ
Applications
Switching power supply
Features
1)Cathode common type.(TO-220)
2)Low IR
3)High reliability
Construcion
Silicon epitaxal planar
Dimensions (Unit : mm)
10.0±0.3
　　　 0.1
4.5±0.3
　　　 0.1
2.8±0.2
　　　 0.1
①
1.2
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : ï¼´O220FN
① Manufacture Date
Data Sheet
Structure
(1) (2) (3)
●Packing Dimensions (Unit : mm)
7
540
34.5
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
V_RM
60
V
V_R
60
V
Io
20
A
Forward current surge peak (60Hz/1cyc) (*1)
I_FSM
100
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
40 to 150
C
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=116C
Elecrical characteristic(Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol
V_F
I_R
 jc
Min. Typ. Max.
-
- 0.58
-
- 600
-
- 1.75
Unit
V
μA
C/W
Conditions
I_F=10A
V_R=60V
junction to case
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2016.09 - Rev.A