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| RB215T-40NZ Datasheet, PDF (2/7 Pages) Rohm – Schottky barrier diode | |||
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RB215T-40NZ
ã
ï¬Electrical characteristics curves
Data Sheet
10
Ta=150ï°C
Ta=125ï°C
1 Ta=75ï°C
0.1
Ta=25ï°C
Ta=-25ï°C
0.01
0
100 200 300 400 500 600
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
1000000
100000
10000
1000
100
10
1
0.1
0
Ta=150ï°C Ta=125ï°C
Ta=75ï°C
Ta=25ï°C
Ta=-25ï°C
5 10 15 20 25 30 35 40
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
10000
1000
100
10
1
0
f=1MHz
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
500
1000
2550
Ta=25ï°C
IF=3A
900
Ta=25ï°C
VR=40V
2540
Ta=25ï°C
f=1MHz
490
n=30pcs
800
n=30pcs
2530
VR=0V
700
2520
n=10pcs
480
600
2510
500
2500
470
460
AVE:472.9mV
400
300
AVE:78.7uA
200
100
2490
2480
2470
2460
AVE:2515.6pF
450
0
2450
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
Ifsm
1cyc
8.3ms
AVE:176.0A
IFSM DISPERSION MAP
Ifsm
t
30
Ta=25ï°C
25
IF=0.5A
IR=1A
20
AVE:27.4ns Irr=0.25*IR
n=10pcs
15
10
5
0
trr DISPERSION MAP
100
IM=100mA
IF=10A
1ms time
10
300us
Mounted on epoxy board
1
Rth(j-a)
Rth(j-c)
1000
100
Ifsm
8.3ms 8.3ms
1cyc
10
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
30
20
D=1/2
Sin(ï±=180)
DC
10
10
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
0
100
0.001 0.01 0.1
1
10 100 1000
TIME:t(s)
0
10
20
30
40
AVERAGE RECTIFIED
Rth-t CHARACTERISTICS
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/3
2016.09 - Rev.A
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