RB215T-40NZ Datasheet, PDF (1/7 Pages) Rohm – Schottky barrier diode

Schottky barrier diode
RB215T-40NZ
Applications
Switching power supply
Dimensions (Unit : mm)
Features
1) Cathode common dual type.(TO-220)
2) Low IR
3) High reliability
215
4
Construction
Silicon epitaxial planar
Data Sheet
Structure
(1) (2) (3)
●Packing Dimensions (Unit : mm)
7
540
34.5
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive peak)
V_RM
Reverse voltage (DC)
V_R
Average rectified forward current(*1)
Io
Forward current surge peak (60Hz/1cyc) (*1)
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Business frequencies, 1/2 Io per diode, Tc=121C
Limits
45
40
20
100
150
40 to 150
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol
V_F
I_R
jc
Min. Typ. Max.
-
- 0.55
-
- 500
-
- 1.75
Unit
V
V
A
A
C
C
Unit
V
μA
C/W
Conditions
I_F=10A
V_R=40V
junction to case
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2016.09 - Rev.A