RB205T-60 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
zElectrical characteristic curves
10
Ta= 1 5 0 ℃
Ta= 1 2 5 ℃
1
Ta= 7 5 ℃
Ta= 2 5 ℃
Ta= - 2 5 ℃
0.1
0.01
0
100 200 300 400 500 600 700
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100000
10000
1000
100
10
1
0.1
0.01
0
Ta= 1 5 0 ℃
Ta= 1 2 5 ℃
Ta= 7 5 ℃
Ta= 2 5 ℃
Ta= - 2 5 ℃
10 20 30 40 50 60
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10000
1000
100
10
1
0
RB205T-60
f=1MHz
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
560
200
1350
Ta= 2 5 ℃
180
IF= 7 .5 A
Ta= 2 5 ℃
VR=60V
1340
Ta= 2 5 ℃
f=1MHz
550
n = 3 0 pc s
160
n = 3 0 pc s
1330
VR=0V
140
1320
n = 1 0 pc s
540
120
1310
100
1300
530
80
1290
AVE:537.0mV
60
1280
520
40
1270
A V E:1 2 9 0 .5 pF
20
AVE:40.6uA
1260
510
0
1250
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
Ifsm
1 c yc
8 .3 m s
AVE:168.0A
IFSM DISRESION MAP
Ifsm
t
30
1000
Ta= 2 5 ℃
25
IF= 0 .5 A
Ifsm
IR = 1 A
Irr= 0 .2 5 * IR
8.3ms 8.3ms
20
n = 1 0 pc s
100
1 c yc
15
10
10
5
AVE:16.0ns
0
trr DISPERSION MAP
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100 ^{Mounted on epoxy board}
20
IM = 1 0 0 m A
IF= 7 .5 A
tim e
300us
R th ( j- a)
10
1ms
10
R th ( j- c )
1
D=1/2
DC
Sin ( θ ＝ 1 8 0 )
10
1
10
TIM E:t(m s)
IFSM-t CHARACTERISTICS
0.1
100
0.001
0.1
10
TIM E:t( s)
Rth-t CHARACTERISTICS
0
1000
0
5
10
15
20
25
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.B
2/3