RB205T-60 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB205T-60
RB205T-60
zApplications
Switching power supply
zFeatures
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
zStructure
10.0±0.3
　　　 0.1
4.5±0.3
　　　 0.1
2.8±0.2
　　　 0.1
①
1.2
1.3
0.8
(1) (2) (3)
ROHM : ï¼´O220FN
① ^{Manufacture Date}
0.7±0.1
0.05
2.6±0.5
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
60
V
Reverse voltage (DC)
V_R
60
V
Average rectified forward current (*1)
Io
15
A
Forward current surge peak (60Hz・1cyc)(*1) I_FSM
100
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-40 to +150
℃
(*1)Tc=100℃max Per chip : Io/2
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
Thermal impedance
V_F
-
- 0.58
I_R
-
-
600
θjc
-
-
2.0
Unit
V
µA
℃/W
Conditions
I_F=7.5A
V_R=60V
junction to case
Rev.B
1/3