RB201A60T-31 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
RB201A60
zElectrical characteristic curves (Ta=25°C)
10000
1000
Ta=75℃
Ta=125℃
Ta=150℃
100
10
1
Ta=25℃
Ta=-25℃
100000
10000
1000
100
10
1
0.1
0.1
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.01
0
Ta=150℃ Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5 10 15 20 25 30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
ff==11MMHHzz
10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
560
100
400
550
Ta=25℃
90
IF=2A
n=30pcs
80
70
Ta=25℃
380
VR=60V
360
n=30pcs
340
Ta=25℃
f=1MHz
VR=0V
n=30pcs
540
60
50
530
AVE:541.7mV
40
30
320
300
AVE:316.3pF
280
260
520
20
AVE:7.24uA
240
10
220
510
0
200
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
250
200
150
100
50
0
150
100
50
Ifsm
1cyc
8.3ms
AVE:66.0A
IFSM DISPERSION MAP
Ifsm
t
30
Ta=25℃
25
IF=0.5A
IR=1A
Irr=0.25*IR
20
n=10pcs
15
10
5
AVE:9.5ns
0
trr DISPERSION MAP
10000
Mounted on epoxy board
IF=0.5A
IM=1mA
1000
100
time(ms)
td=300us
Rth(j-a)
Rth(j-l)
10
Rth(j-c)
100
90
80
Ifsm
70
8.3ms 8.3ms
60
1cyc
50
40
30
20
10
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
3
2
D=1/2
DC
Sin(θ＝180)
1
0
1
0
1
10
100
0.001 0.01 0.1 1 10 100 1000
0
1
2
3
4
5
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.C
2/3