RB201A60T-31 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB201A60
RB201A60
zApplications
General rectification
zFeatures
1) Cylindrical mold type.(MSR)
2) Low V_F.
3) High ESD.
zConstruction
Silicon epitaxial planar
z Dimensions (Unit : mm)
CATHODE　BAND (BLUE)
φ0.6±0.1
29±1
3.0±0.2
ROHM : MSR
①
②
Manufacture Date
29±1
φ2.5±0.2
z Taping specifications (Unit : mm)
H2
A
BLUE
H2
E
L1
H1
L2
F
H1
IVORY
M記a号rk 寸St法and規ard格dim値en(smiomn )
value (mm)
T-31 52.4±1.5
Ａ _{T-32 26.0+0.4}
-0
B
ï¼¢
5.0±0.5
ï¼£
0.5ＭＡＸ
Ｄ
0
C
ï¼¥
50.4±0.4
Ｆ
0.3ＭＡＸ
H1
6.0±0.5
H2
5.0±0.5
L1-L2 0.6ＭＡＸ
＊H1(6mm)：BROWN
D
注cf)　: 累cu積mピulaッtチiv のe p許itc容h差toはler2a0nピcッe チwiでth±201.5pmitcmh以th下anとす±1る.5m m
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
60
V
Reverse voltage (DC)
V_R
60
V
Average rectified forward current (*1)
Io
2
A
Forward current surge peak （60Hz・1cyc） I_FSM
40
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55 to +150
℃
(*1) Mounted on epoxy board. 180°Half sine wave
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
V_F
-
Reverse current
I_R
-
Typ. Max.
- 0.58
-
100
Unit
Conditions
V
I_F=2.0A
µA
V_R=60V
Rev.C
1/3