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| RB162M-40 Datasheet, PDF (2/4 Pages) Rohm – Schottky Barrier Diode | |||
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RB162M-40
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Data Sheet
ï¬Electrical characteristics curves
1000
Ta=150ï°C
Ta=125ï°C
100
10
Ta=-25ï°C
Ta=25ï°C
10000
1000
100
10
1
0.1
Ta=75ï°C
0.01
0.001
1
0
0
100 200 300 400 500 600
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
550
10
Ta=25â
TIFa==12A5ï°C
9
540
n=IF3=01p.c0sA
8
n=30pcs
7
530
6
5
520
4
3
510
AVE : 517.1mV
2
AVE:349.9mV
1
500
0
VF DISPERSION MAP
Ta=150ï°C
Ta=75ï°C Ta=125ï°C
Ta=25ï°C
Ta=-25ï°C
10
20
30
40
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
Ta=25ï°C
VR=40V
n=30pcs
AVE : 2.0ïA
IR DISPERSION MAP
1000
100
f=1MHz
10
1
0
5 10 15 20 25 30 35
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
220
Ta=25ï°C
210
f=1MHz
n=20pcs
200
190
180
AVE : 181.3pF
170
160
Ct DISPERSION MAP
200
150
100
50
0
200
150
100
50
0
1
Ifsm
1cyc
8.3ms
AVE : 68.8A
IFSM DISPERSION MAP
30
Ta=25,80ï°C
1000
25
IF=0.5A
20
IR=1A
Irr=0.25*IR
Ifsm
n=20pcs
8.3ms 8.3ms
1cyc
15
100
10
5
AVE : 7.8ns
AVE : 10.2ns
0
25ï°C
80ï°C
trr DISPERSION MAP
10
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Ifsm
t
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
1000
100
10
On glass-epoxy board
IM=10mA
IF=0.5A
1ms tim
300ïs
Rth(j-a)
Rth(j-c)
1
0.1
100
0.001 0.01 0.1
1
10 100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
1
0.9
D=1/2
0.8
DC
0.7
0.6
Sin(ï±=180)
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
2/3
2010.02 - Rev.A
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