RB162M-40 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB162M-40
Applications
General rectification
Dimensions(Unit : mm)
Features
1)Small power mold type.(PMDU)
2)Low I_R
3)High reliability
Construction
Silicon epitaxial planer
Land size figure(Unit : mm)
1.2
PMDU
Structure
Taping specifications(Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
0.25±0.05
1.81±0.1
4.0±0.1
φ1.0±0.1
1.5MAX
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive)
V_RM
Reverse voltage (DC)
V_R
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz / 1cyc)
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounting on epoxi board. (Tc=100°C MAX )
Limits
40
40
1
30
150
-40to+150
Electrical characteristics(Ta=25C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F
-
-
0.55
I_R
-
-
100
Unit
V
V
A
A
C
C
Unit
Conditions
V
I_F=1A
μA
V_R=40V
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2010.02 - Rev.A