RB161L-40_1 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
RB161L-40
zElectrical characteristic curves (Ta=25°C)
Ta=75℃
1
Ta=125℃
1000000
Ta=150℃
100000
0.1
10000
Ta=25℃
1000
Ta=-25℃
0.01
100
10
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.001
0
200
400
600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
1
0 5 10 15 20 25 30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
f=1MHz
10
1
0
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
370
500
Ta=25℃
450
IF=1A
360
n=30pcs
400
350
350
300
250
340
200
AVE:348.9mV
150
330
100
50
320
0
VF DISPERSION MAP
300
Ta=25℃
290
VR=20V
n=30pcs
280
270
260
250
240
AVE:110.4A
230
220
210
200
IR DISPERSION MAP
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:251.8pF
Ct DISPERSION MAP
150
20
Ifsm
1cyc
8.3ms
15
100
10
50
5
AVE:127.0A
0
0
IFSM DISRESION MAP
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
AVE:9.3ns
trr DISPERSION MAP
200
Ifsm
150
8.3ms 8.3ms
1cyc
100
50
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
200
Ifsm
150
t
100
50
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
100
Mounted on epoxy board
Rth(j-a)
10
1
0.1
0.01
IM=10mA
Rth(j-c)
IF=0.5A
1ms time
300us
0.1
1
10 100
TIME:t(s)
Rth-t CHARACTERISTICS
1000
1
0.9
0.8
D=1/2
0.7
DC
0.6 Sin(θ＝180)
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.F
2
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