RB161L-40_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB161L-40
RB161L-40
zApplications
General rectification
z Dimensions (Unit : mm)
z Land size figure (Unit : mm)
2.0
2.6±0.2
zFeatures
1) Small power mold type. (PMDS)
2) Low V_F.
3) High reliability.
33
①②
0.1±0.02
　　　 0.1
zConstruction
Silicon epitaxial planar
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
① ② ^{Manufacture Date}
PMDS
zStructure
z Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
20
V
Average rectified forward current
Io
1
A
Forward current surge peak （60Hz・1cyc）
I_FSM
70
A
Junction temperautre
Tj
125
℃
Storage tempereature
Tstg
-40 to +125
℃
(*1)Mounted on epoxy board. 180°Half sine wave
zElectrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F
-
- 0.45
I_R
-
-
1
Unit
Conditions
V
I_F=1.0A
mA VR=20V
Rev.F
1/3