RB160VA-40_1 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
RB160VA-40
zElectrical characteristic curves (Ta=25°C)
1
Ta=150℃
Ta=125℃
0.1
Ta=75℃
0.01
Ta=25℃
Ta=-25℃
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100000
10000
1000
100
10
1
0.1
0.01
0.001
0
Ta=150℃Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
10
20
30
40
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
f=1MHz
10
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
530
30
200
Ta=25℃
Ta=25℃
190
Ta=25℃
520
IF=0.7A
25
n=30pcs
VR=40V
n=30pcs
180
f=1MHz
VR=0V
20
170
n=10pcs
510
160
15
150
500
140
10
130
490
AVE:501.9mV
AVE:1.5772uA
5
120
110
AVE:121.1pF
480
0
100
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10
5
AVE:15.6A
0
IFSM DISRESION MAP
1000
Mounted on epoxy board
IM=10mA
IF=0.2A
1ms ^time
300us
100
Rth(j-a)
Rth(j-c)
10
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
20
Ifsm
15
8.3ms 8.3ms
1cyc
10
5
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
0.9
D=1/2
0.8
0.7 _{Sin(θ＝180)}
0.6
DC
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
30
25
20
15
10
5
0
1
Ifsm
t
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.3
0.2
Sin(θ＝180)
D=1/2
0.1
DC
0
0
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
Rev.B
2/3