RB160VA-40_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB160VA-40
RB160VA-40
zApplications
General rectification
zFeatures
1) Small mold type. (TUMD2)
2) Low I_F, Low I_R.
3) High reliability.
zConstruction
Silicon epitaxial planar
z External dimensions (Unit : mm)
1.3±0.05
0.17±0.1
　　 0.05
z Land size figure (Unit : mm)
1.1
TUMD2
zStructure
0.8±0.05
ROHM : TUMD2
0.6±0.2
　　　 0.1
dot (year week factory) + day
z Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
　　　　　 0
0.25±0.05
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward peak surge current（60Hz・1cyc）
Junction temperature
Storage temperature
1.43±0.05
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
4.0±0.1
φ1.0±0.2
　　　　　0
Limits
40
40
1
5
150
-40 to +150
0.9±0.08
Unit
V
V
A
A
℃
℃
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
Reverse current
V_F
-
I_R
-
Typ.
0.50
1.5
Max.
0.55
50
Unit
Conditions
V I_F=700mA
µA V_R=40V
Rev.B
1/3