RB160M-40 Datasheet, PDF (2/3 Pages) Rohm – Schottky barrier diode

Diodes
RB160M-40
zElectrical characteristic curves (Ta=25°C)
10000
Ta=125°C
1000 Ta=75°C
Ta=25°C
100 ^{Ta= −25°C}
10000
1000
100
Ta=125°C
Ta=75°C
10
10
Ta=25°C
1
1
0.1
0.1
Ta= −25°C
0.01
0.01
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE : VF (mV)
Fig.1 Forward Temperature
Characteristics
0.001
0
10
20
30
40
50
REVERSE VOLTAGE : VR (V)
Fig.2 Reverse Temperature
Characteristics
1000
100
f=1MHz
Ta=25°C
10
1
0 5 10 15 20 25 30 35
REVERSE VOLTAGE : VR (V)
Fig.3 Capacitance Between
Terminals Characteristics
2.0
1.8
1.6
DC
D=1 / 2
1.4
Sin (θ=180)
1.2
1.0
0.8
0.6
0A
IO
0.4 0V
VR
0.2
0.0
0
t ^{D=t / T}
T VR=20V
Tj=150°C
25 50
75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
Fig.4 Derating Curve (IO-Ta)
2.0
DC
1.5
D=1 / 2
1.0
Sin (θ=180)
0A
IO
0.5 _0V
VR
0.0
0
t _{D=t / T}
T _VR=20V
Tj=150°C
25
50
75 100 125
CASE TEMPERATURE : Tc (°C)
Fig.5 Derating Curve (IO-Tc)
10
9
8
7
6
5
4
3
2
1
AVE : 8.22KV
0
C=200pF / R=0Ω
Fig.6 ESD
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