RB160M-40 Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB160M-40
RB160M-40
zApplication
Low VF schottky barrier diode
For switching power supplies
Battery protection against reversal current
zFeatures
1) Small surface mounting type. (PMDU (2616) )
2) High reliability.
3) Low VF (VF=0.46V at 1A).
zStructure
Silicon Epitaxial Planer
zExternal dimensions (Unit : mm)
0.9±0.1
CATHODE MAKE
0.1
+0.1
−0.05
ROHM :
EIAJ : −
JEDEC :
1.6±0.1
0.80±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
VRM
40
V
Reverse voltage (DC)
VR
40
V
Average rectified forward current
IO
1
A
Forward current surge peak (60Hz / 1cyc.)
IFSM
30
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−40 to 150
°C
zElectrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
Min.
VF
−
IR
−
Typ.
0.46
4.0
Max.
0.51
30
Unit
Conditions
V
IF=1.0A
µA
VR=40V
1/2