RB160M-30_11 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

RB160M-30
　
Electrical characteristic curves
Data Sheet
1
Ta=75℃
Ta=125℃
0.1
0.01
Ta=25℃
Ta=-25℃
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10000
1000
100
10
1
0.1
0.01
0
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5 10 15 20 25 30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
f=1MHz
10
1
0
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
450
100
400
Ta=25℃
90
Ta=25℃
390
Ta=25℃
440
IF=1A
n=30pcs
80
VR=30V
380
n=30pcs
f=1MHz
VR=0V
70
370
n=10pcs
430
60
360
50
350
420
40
340
AVE:324.4pF
AVE:424.2mV
410
30
AVE:8.172uA
330
20
320
10
310
400
0
300
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
150
20
1cyc
Ifsm
8.3ms
15
100
100
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
AVE:98.0A
50
10
AVE:11.7ns
5
50
Ifsm
8.3ms 8.3ms
1cyc
0
IFSM DISRESION MAP
0
trr DISPERSION MAP
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Mounted on epoxy board
150
1000
1
IM=10mA
IF=0.5A
Ifsm
t
100
1ms time
Rth(j-a)
0.8
DC
D=1/2
100
300us
0.6
10
Rth(j-c)
0.4 ^{Sin(θ＝180)}
50
1
0.2
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
0.001 0.01 0.1
1
10
TIME:t(s)
100 1000
Rth-t CHARACTERISTICS
0
0
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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2011.04 - Rev.C