RB160M-30_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Data Sheet
Schottky barrier diode
RB160M-30
Applications
General rectification
Dimensions (Unit : mm)
1.6±0.1
0.1±0.1
　　　 0.05
Features
1) Small power mold type. (PMDU)
2) Low I_R.
3) High reliability
Construction
Silicon epitaxial planer
0.9±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
0.8±0.1
Land size figure (Unit : mm)
1.2
PMDU
Structure
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
0.25±0.05
1.81±0.1
4.0±0.1
φ1.0±0.1
1.5MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
V_RM
Reverse voltage (DC)
V_R
Average rectified forward current
Io
Forward current surge peak (60Hz / 1cyc)
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounted on epoxy board. 180° Half sine wave
Limits
30
30
1
30
125
40 to 125
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F1
-
0.39 0.46
V_F2
-
0.43 0.48
I_R1
-
3.0 20
I_R2
-
9.0 50
Unit
V
V
A
A
C
C
Unit
Conditions
V
I_F=0.5A
V
I_F=1.0A
A
V_R=15V
A
V_R=30V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.C