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RB160L-60_09 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode
RB160L-60
zElectrical characteristics curves
1000
Ta=75°C
Ta=125°C
100
10
Ta=25°C
Ta=-25°C
1
0
200
400
600
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
550
Ta=25°C
IF=1A
540
n=30pcs
530
520
510
AVE:529.4
500
VF DISPERSION MAP
ɹ
Data Sheet
10000
1000
100
10
1
0.1
0.01
0.001
0
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10 20 30 40 50 60
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1000
100
f=1MH
10
1
0
5 10 15 20 25 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
30
200
25
Ta=25°C
VR=60V
190
n=30pcs
Ta=25°C
f=1MHz
VR=0V
n=10pcs
20
180
15
170
10
AVE:3.724
5
160
AVE:192.4pF
0
150
IR DISPERSION MAP
Ct DISPERSION MAP
200
Ifsm
1cyc
150
8.3ms
100
50
AVE:126.0A
0
IFSM DISRESION MAP
200
Ifsm
150
t
100
50
0
1
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
30

Ta=25°C
25
IF=0.5A
Ifsm
IR=1A

Irr=0.25*IR
8.3ms 8.3ms
20
n=10pcs
1cyc
15

10
AVE:11.7ns

5
0
trr DISPERSION MAP

1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
Mounted on epoxy board
100
Rth(j-a)
10
1
0.1
0.001
IM=10mA
Rth(j-c)
IF=0.5A
1ms tim
300us
0.1
10
TIME : t(s)
Rth-t CHARACTERISTICS
1000
2
1.5
1
Sin(θ=180)
0.5
D=1/2
DC
0
0
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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2009.12 - Rev.C