RB160L-60_09 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Schottky barrier diode
RB160L-60
zApplications
General rectification
zDimensions (Unit : mm)
zFeatures
1) Small power mold type. (PMDS)
2) Low I_R.
3) High reliability
zConstruction
Silicon epitaxial planar
2.6±0.2
44
①②
1.5±0.2
0.1 ±0.02
　　　 0.1
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
① ② _{Manufacture Date}
zLand size figure (Unit : mm)
2.0
PMDS
zStructure
zTaping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
V_RM
Reverse voltage (DC)
V_R
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz/1cyc) I_FSM
Junction temperature
Tj
Storage temperature
Tstg
(*1) Mounted on epoxy board. 180°Half sine wave
Limits
60
60
1
30
125
-40 to +125
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
- 0.58
Reverse current
I_R
-
-
1
Unit
V
V
A
A
°C
°C
Unit
Conditions
V
I_F=1.0A
mA V_R=60V
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2009.12 - Rev.C