RB160L-40_11 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

RB160L-40
　
Electrical characteristic curves
Data Sheet
1
Ta=75℃
Ta=125℃
Ta=150℃
0.1
0.01
100000
10000
Ta=25℃
Ta=-25℃
1000
100
10
1
0.1
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.01
0
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
10
20
30
40
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
f=1MHz
10
1
0
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
510
30
Ta=25℃
28
IF=1A
26
500
n=30pcs
24
22
20
490
18
16
14
480
12
10
8
470
6
AVE:489.6mV
4
2
460
0
VF DISPERSION MAP
250
Ta=25℃
240
VR=40V
n=30pcs
230
220
210
200
190
180
AVE:2.207uA
170
160
150
IR DISPERSION MAP
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:192.7pF
Ct DISPERSION MAP
200
Ifsm
1cyc
150
8.3ms
100
50
AVE:125.6A
0
IFSM DISRESION MAP
300
250
200
150
100
50
0
1
Ifsm
t
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
20
200
Ta=25℃
IF=0.5A
Ifsm
15
IR=1A
150
Irr=0.25*IR
8.3ms 8.3ms
n=10pcs
1cyc
10
100
5
AVE:8.667ns
0
trr DISPERSION MAP
50
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
100
Mounted on epoxy board
Rth(j-a)
10
1
0.1
0.01
Rth(j-c)
IM=10mA
IF=0.5A
1ms time
300us
0.1
1
10 100
TIME:t(s)
Rth-t CHARACTERISTICS
1000
2
1.5
D=1/2
Sin(θ＝180)
DC
1
0.5
0
0
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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2011.04 - Rev.B