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RB160L-40_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode | |||
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Data Sheet
Schottky barrier diode
RB160L-40
ï¬Applications
General rectification
ï¬Dimensions (Unit : mm)
ï¬Features
1) Small power mold type. (PMDS)
2) Low IR.
3) High reliability
ï¬Construction
Silicon epitaxial planer
2.6±0.2
34
â â¡
1.5 ±0.2
0.1±0.02
ããã 0.1
2.0±0.2
ï¬Land size figure (Unit : mm)
2.0
PMDS
ï¬Structure
ROHM : PMDS
JEDEC : SOD-106
â â¡ Manufacture Date
ï¬Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
Ï1.55±0.05
0.3
2.9±0.1
4.0±0.1
Ï1.55
2.8MAX
ï¬Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC)
VR
Average rectified forward current
Io
Forward current surge peak (60Hz / 1cyc)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Tc=90°C max Mounted on epoxy board. 180° Half sine wave
Limits
40
40
1
70
150
ï40 to ï«150
ï¬Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
VF
-
-
0.55
IR1
-
-
10
IR2
-
-
100
Unit
V
V
A
A
ï°C
ï°C
Unit
Conditions
V
IF=1.0A
ïA
VR=6V
ïA
VR=40V
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.B
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